3sk41 Datasheet ((exclusive))

The 3SK41 is a legacy N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily designed for high-frequency applications, such as VHF (Very High Frequency) amplifiers and mixers in radio and television tuners. Core Specifications

While specific values can vary slightly by manufacturer (historically produced by companies like Hitachi or NEC), the standard parameters for the 3SK41 include: Type: N-Channel Depletion Mode Dual-Gate MOSFET. Drain-Source Voltage ( VDScap V sub cap D cap S end-sub ): Max 20V. Drain Current ( IDcap I sub cap D ): Max 25mA. Power Dissipation ( Ptotcap P sub t o t end-sub ): Approximately 200mW to 300mW. Forward Transfer Admittance ( ): Typically 10 to 15 mS (millisiemens) at 1kHz. Input Capacitance ( Cisscap C sub i s s end-sub ): Low, typically around 5.0pF to 6.0pF.

Package: Often found in a 4-pin TO-72 metal can or similar small plastic packages. Functional Roles

The "dual-gate" design is the defining feature of the 3SK41, allowing it to excel in two specific areas:

Automatic Gain Control (AGC): By applying a control voltage to the second gate (Gate 2), you can vary the gain of the signal passing through the first gate (Gate 1). This is essential for stabilizing radio reception under varying signal strengths.

Mixing: In superheterodyne receivers, the dual-gate structure allows one gate to receive the RF (Radio Frequency) signal and the other to receive the LO (Local Oscillator) signal, mixing them with high isolation and low noise. Key Performance Features

High Power Gain: It provides significant amplification in the VHF band (up to 200–300 MHz).

Low Noise Figure: Designed to minimize the "hiss" or thermal noise added to weak signals, making it ideal for the front-end stages of receivers.

Low Feedback Capacitance: The dual-gate construction reduces the internal capacitance between the drain and the input gate, which improves stability and prevents unwanted oscillations at high frequencies. Typical Pinout (TO-72 Style)

When looking at the bottom of a TO-72 metal package (with the tab as a reference): Source (often connected to the case) Drain Gate 2 Gate 1 Modern Availability

The 3SK41 is largely considered an obsolete or "vintage" component. It is rarely used in new designs today, as it has been replaced by more modern surface-mount devices (SMD) like the BF998 or high-speed Gallium Arsenide (GaAs) FETs. However, it remains highly sought after by hobbyists for repairing vintage ham radios, scanners, and TV tuners.

However, I can guide you on how to find datasheets for electronic components:

Manufacturer's Website: The best place to start is the official website of the component's manufacturer. If you know the manufacturer, you can directly search for the part number on their website.
Datasheet Search Engines: Websites like DigiKey, Mouser, and Newark often have comprehensive datasheet search functions. You can enter the part number and find the datasheet, along with information on availability and pricing.
Google Search: A simple Google search with the part number and the term "datasheet" can often lead you to the right document. For example, searching for "3sk41 datasheet" might yield results from various electronic component distributors or manufacturer websites.
Component Databases: Websites like Alldatasheet, Datasheet catalog, or Electronics Datasheet.com can also be useful resources.

If you can provide more details about the component, such as:

The type of component (e.g., transistor, voltage regulator)
The manufacturer (if known)

I could try to offer more specific guidance or resources to help you find the datasheet you're looking for.

The 3SK41 is a legacy N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily designed for VHF (Very High Frequency) applications. These components were staples in the design of high-sensitivity radio equipment, particularly as amplifiers and mixers. Because this part is largely discontinued or considered "vintage," finding modern documentation requires looking back at classic semiconductor standards. 🚀 Technical Specifications Overview

The 3SK41 was engineered to provide high gain and low noise figures in high-frequency circuits. Below are the typical electrical characteristics found in the original datasheet. Drain-Source Voltage (Vds): Maximum 20V Drain Current (Id): Maximum 25mA Gate-Source Voltage (Vgs1/Vgs2): ±10V Power Dissipation (Pd): 200mW Forward Transfer Admittance (|yfs|): 10 to 18 mS Input Capacitance (Ciss): ~5.0 pF Noise Figure (NF): ~2.0 dB at 200 MHz 🛠️ Key Features and Advantages

The dual-gate structure of the 3SK41 offers specific advantages that single-gate transistors cannot match easily: 1. Superior AGC Performance

The second gate (Gate 2) is specifically designed for Automatic Gain Control (AGC). By varying the voltage on Gate 2, the gain of the amplifier can be adjusted without significantly shifting the input impedance or frequency response. 2. Low Feedback Capacitance

Dual-gate MOSFETs have very low internal feedback capacitance (Crss). This allows for high-stability amplification at VHF frequencies without the need for complex neutralization circuits. 3. Cross-Modulation Resistance 3sk41 datasheet

The 3SK41 is known for its linear transfer characteristics. This reduces the likelihood of "intermodulation distortion," ensuring that strong nearby signals do not drown out the weak signal you are trying to receive. 📐 Pinout and Package Information

The 3SK41 typically comes in a metal-can package (similar to TO-72) with four leads. Proper identification of the leads is critical for circuit stability.

Source: Usually connected to the case/shield to reduce noise. Drain: The output terminal. Gate 2: The control or AGC terminal. Gate 1: The signal input terminal. 📻 Common Applications VHF Tuners: Used in television and FM radio front-ends.

RF Amplifiers: Providing initial signal boost for weak radio waves.

Mixer Stages: Utilizing the two gates to mix the RF signal with a Local Oscillator (LO) signal efficiently.

IF Amplifiers: Standard intermediate frequency amplification in communications receivers. 🔄 Modern Alternatives and Equivalents

Since the 3SK41 is no longer in mass production, hobbyists and repair technicians often look for replacements. While no modern part is a 100% mechanical match, the following are often used in similar circuits: 3SK45: A very close relative often used interchangeably.

BF960 / BF981: Common European dual-gate MOSFETs used for VHF/UHF.

NTE161: A universal replacement part often found in repair catalogs. ⚠️ Usage Considerations

When working with a 3SK41, remember that MOSFETs are highly sensitive to Electrostatic Discharge (ESD). Even a small spark from your fingertip can puncture the thin oxide layer of the gates, destroying the transistor. Always use an anti-static wrist strap and a grounded soldering iron when handling these components.

Here’s a concise summary of the 3SK41 MOSFET's key specifications and typical datasheet details:

Device type: N-channel enhancement-mode MOSFET (small-signal)
Package: Likely TO-92 or SOT-23 (common small-signal MOSFET packages)
VDS (drain–source voltage): ~30–60 V (typical for small-signal MOSFETs)
ID (continuous drain current): ~100–500 mA
RDS(on): a few ohms to tens of ohms (varies by gate voltage; typically specified at VGS = 10 V and/or 4.5 V)
VGS(th) (gate threshold): ~0.5–3 V
Power dissipation: a few hundred mW (TO-92 ~400–625 mW)
Gate charge/Cgs: small (pF range)
Typical applications: switching small loads, level shifting, analog switches

The 3SK41 is a high-performance Silicon N-Channel Dual Gate MOSFET typically used in high-frequency (RF) and microwave applications. It is manufactured by companies including NEC, Hitachi, and Motorola and is often housed in a CAN-4 (similar to TO-72) metal package. Key Features & Applications:

Dual Gate Structure: Ideal for RF amplifiers, mixers, and Automatic Gain Control (AGC) circuits in radio receivers.

Performance: Known for high gain, low noise figure, and high transconductance. Typical Uses: VHF/UHF tuners and receiver front-ends. Common Information Found in 3SK41 Datasheets: Manufacturer: NEC/Hitachi/Motorola Package Type: CAN-4 / Metal Can

Pinout: Gate 1, Gate 2, Source, Drain (often with a 4th lead for the case/shield) Commonly Available Data Sources: Alldatasheet - 3SK41L Veswin 3SK41 Description Utsource 3SK41 Description

To make sure you have the exact information needed, are you using this for a new design or to repair vintage equipment (like a Kenwood transceiver)? 3SK41 NEC/HITACHI/MOTOROLA CAN-4 Transistors

is primarily documented as a high-performance N-channel dual-gate MOSFET

, typically used in high-frequency applications like VHF/UHF amplifiers or mixers. It is manufactured by brands such as Censtry.com Key Technical Features According to technical listings from , the 3SK41 offers: Dual-Gate Architecture

: Allows for superior gain control and low cross-modulation, making it ideal for radio frequency (RF) stages. Fast Switching

: Designed for efficient power management and high-speed signal processing. cap R sub cap D cap S open paren o n close paren end-sub

: Features low "on" resistance to ensure minimal power loss during operation. Compact Packaging : Typically found in a

or similar small-form-factor package to fit dense circuit boards. High Performance/Stability The 3SK41 is a legacy N-channel dual-gate MOSFET

: Engineered to maintain consistent operation in control circuits and security systems. Censtry.com Common Applications VHF/UHF Amplifiers : General-purpose RF amplification. Signal Conversion

: Used in mixing and switching circuits for electronic equipment. Power Management : High-speed switching in compact power supplies.

Overview

The 3SK41 is a silicon N-channel JFET designed for high-frequency and low-noise applications. It features a high gain, low noise figure, and good stability, making it suitable for use in various electronic circuits, including amplifiers, mixers, and switches.

Key Features (from datasheet)

Type: N-channel JFET
Package: TO-72 (a small, 4-lead package)
Drain-Source Voltage (Vds): 20V
Gate-Source Voltage (Vgs): -20V to +20V
Drain Current (Id): 10mA
Power Dissipation (Pd): 200mW
Operating Temperature: -55°C to +150°C
Noise Figure (NF): 3dB (typical) at 100MHz
Current Gain-Bandwidth Product (ft): 400MHz (typical)

Electrical Characteristics

The 3SK41 has the following electrical characteristics:

Transconductance (gm): 6 to 12 mS
Drain-Source On-Resistance (Rds(on)): 100Ω (max)
Gate-Source Leakage Current (Igs): -1nA (max)
Drain-Source Leakage Current (Ids): 1nA (max)

Applications

The 3SK41 can be used in various applications, including:

RF amplifiers: The transistor's high gain and low noise figure make it suitable for use in radio frequency (RF) amplifiers.
Mixers: The 3SK41 can be used as a mixer transistor in communication equipment.
Switches: The transistor's low on-resistance and high current handling capability make it suitable for use in electronic switches.

Precautions

When handling the 3SK41, it is essential to take precautions to prevent damage from electrostatic discharge (ESD). The transistor should be handled by the leads only, and not by the body. Additionally, the operating conditions should be within the specified limits to ensure reliable operation.

In conclusion, the 3SK41 is a versatile N-channel JFET with a range of applications in electronic circuits. Its high gain, low noise figure, and good stability make it a popular choice among circuit designers and engineers.

Key Features of 3SK41:

High-frequency amplifier: The 3SK41 is designed for high-frequency amplification applications, such as radio frequency (RF) amplifiers, intermediate frequency (IF) amplifiers, and video amplifiers.
Low noise figure: The 3SK41 has a low noise figure, which makes it suitable for use in low-noise amplifier (LNA) applications.
High gain: The transistor has a high gain, which allows for significant amplification of weak signals.
Wide bandwidth: The 3SK41 has a wide bandwidth, making it suitable for use in applications that require amplification of high-frequency signals.

Specifications:

Drain-source voltage (Vds): 20V
Gate-source voltage (Vgs): -20V
Drain current (Id): 10mA
Noise figure (NF): 3dB (typical)
Gain-bandwidth product (GB): 300MHz (typical)

Applications:

RF amplifiers: The 3SK41 can be used in RF amplifier circuits to amplify weak RF signals.
Video amplifiers: The transistor can be used in video amplifier circuits to amplify video signals.
Communication equipment: The 3SK41 can be used in communication equipment, such as receivers and transmitters.

Datasheet:

You can find the datasheet for the 3SK41 transistor on various online resources, such as:

Electronic component distributors' websites (e.g., DigiKey, Mouser)
Manufacturer's websites (e.g., Toshiba, Panasonic)
Datasheet search engines (e.g., Datasheet catalog, Alldatasheet)

When working with the 3SK41, always refer to the latest datasheet for the most up-to-date specifications and characteristics.

Do you have any specific questions about the 3SK41 datasheet or its applications?

I was unable to locate a specific datasheet for a component labeled "3sk41" in my available technical databases or general search results.

This part number does not match a standard JEDEC, EIAJ, or popular European Pro Electron transistor registration. It could be:

A misidentified part – Common possibilities include: Manufacturer's Website : The best place to start
- 3SK41 (a dual-gate MOSFET for RF applications, typically made by Hitachi or similar Japanese manufacturers). If this is the case, you may find it by searching for "3SK41 datasheet" directly on sites like DatasheetArchive, Alldatasheet, or Nexperia (though Nexperia uses different codes).
- 3SK40 or 3SK42 – These are more common dual-gate MOSFETs (e.g., 3SK40 is a known RF amplifier MOSFET). If you misread the number, those datasheets are widely available.
- 3S K41 – Some older Japanese parts have a space or different formatting.
- 3SK41 might be a proprietary or house number from a specific equipment manufacturer (e.g., Sony, Kenwood, or older TV tuner modules).
A generic or house-marked part – Not cross-referenced in public datasheet repositories.

Recommended next steps:

Double-check the marking on the actual component – look for full text, logos, or date codes.
Search using parameters instead of a number: e.g., if it’s a dual-gate N-channel MOSFET likely used in VHF tuners, search for "dual gate MOSFET VHF datasheet" and compare pinouts (Source, Gate1, Gate2, Drain).
Check alternative part databases:
- DatasheetCatalog.com
- Alldatasheet.com
- Octopart.com (for active/distributed parts)
If you found "3sk41" in a schematic or parts list, please provide the equipment make/model, and I may be able to suggest a replacement or cross-reference.

If you meant 3SK41 as a dual-gate MOSFET and can confirm that, I can provide typical characteristics (IDSS, Vgsoff, Yfs, Ciss) based on similar 3SK series devices, but an official manufacturer datasheet is not in my current knowledge base.

is a high-frequency Silicon N-Channel Dual-Gate MOSFET primarily used in VHF amplifier and mixer applications. Manufactured by companies like NEC, Hitachi, and Motorola

, it is a classic component often found in amateur radio equipment and older television tuners. www.jotrin.ru Key Technical Specifications

The 3SK41 is designed for low-noise, high-gain performance at high frequencies. Below are the typical parameters for this device: Drain-Source Voltage ( cap V sub cap D cap S end-sub Drain Current ( cap I sub cap D Power Dissipation ( cap P sub cap D 250mW (0.25W) Package Type: TO-72 (4-lead metal can) Drain-Source On-Resistance ( cap R sub cap D cap S open paren o n close paren end-sub Functional Overview

The dual-gate structure of the 3SK41 allows for several unique circuit advantages: Reduced Feedback Capacitance:

The second gate acts as a shield between the input gate and the drain, significantly reducing Miller effect capacitance. This provides better stability and higher gain at VHF frequencies. Automatic Gain Control (AGC):

By varying the bias on the second gate (Gate 2), the gain of the MOSFET can be controlled without significantly shifting the input impedance of Gate 1. Mixing Applications:

In mixer circuits, the local oscillator signal can be applied to Gate 2 while the RF signal is applied to Gate 1, allowing for efficient frequency conversion with low cross-modulation. Applications & Substitutes Common Uses:

Used in receiver RF amplifiers and balanced mixer stages, particularly in legacy radio gear. Equivalents: If the 3SK41 is unavailable, common substitutes include the 3SK40, 2SK701, 2SK702, and 2SK703 Legacy Availability:

It is currently considered an obsolete or "hard-to-find" part but can still be sourced through specialty electronic distributors like Jotrin Electronics

For a detailed visual of the pinout or specific performance curves, you can find the 3SK41 PDF datasheet on sites like AllDatasheet circuit diagrams

for a specific RF amplifier or mixer design using the 3SK41? 3SK41 Datasheet, PDF - ALLDATASHEET.COM

All. Datasheet. Distributor. Manufacturer. 3SK41. 3SK4. Match, Like. No Data. 3SK40(1) 3SK45(2) Start with. No Data. No Data. End. ALLDATASHEET.COM 3SK41 - NEC/HITACHI/MOTOROLA - Jotrin Electronics

Introduction: Why the 3SK41 Still Matters

In the world of RF (Radio Frequency) design, certain components achieve legendary status not because of flashy marketing, but due to pure performance and reliability. The 3SK41 is one such component. While it is now considered an obsolete or "end-of-life" (EOL) part, this N-channel dual-gate MOSFET remains highly sought after by vintage radio restorers, HF amplifier builders, and electronics hobbyists.

If you are searching for the 3SK41 datasheet, you are likely either repairing a classic tuner from the 1980s–1990s, designing a low-noise front-end for a receiver, or trying to cross-reference a replacement. This article serves as a detailed datasheet analysis, covering absolute maximum ratings, electrical characteristics, pin configurations, application circuits, and modern alternatives.

1. Concept Overview

This feature utilizes the high-speed switching characteristics and voltage handling of the 3SK41 to create a Soft-Start Mechanism for AC induction motors or high-intensity lighting systems (such as industrial halogen lamps).

Instead of applying full voltage instantly (which causes high inrush current and mechanical stress), this feature gradually ramps up the voltage delivered to the load using Pulse Width Modulation (PWM).

Out-of-Circuit (Diode Mode on Multimeter)

Source to Drain: Should read open (OL) in both directions. It is a MOSFET.
Gate 1 to Source: There should be a diode-like reading (0.4V – 0.7V) from Gate 1 to Source. The internal protection diodes cause this. Reverse direction should be open.
Gate 2 to Source: Same as Gate 1.

Part 7: How to Test a 3SK41 (No Datasheet? No Problem!)

Since an original datasheet is hard to find, use this quick in-circuit or out-of-circuit test procedure.

Example small RF amplifier use (practical)

Typical single‑stage VHF preamp:
- VDD: 6–12 V (respect absolute max)
- Drain load: high‑Q choke or resistor with RF choke to isolate DC
- Gate1 bias: ~0 V via 100 kΩ to the source (or mid bias per datasheet recommended point)
- Gate2 used for AGC: biased through resistor divider with bypass cap for DC decoupling
- Source: small resistor 10–100 Ω for stability, bypassed for RF if higher gain desired
- Output matching: L‑C network tuned to band, compensate for Cgd/Cgs

(Adjust resistor and choke values to meet the datasheet’s recommended bias point where gm is adequate and ID within limits.)

Part 5: Application Circuit – 200MHz RF Amplifier

The classic application from the 3SK41 datasheet is a cascode-like RF amplifier. Unlike a single-gate MOSFET, Gate 2 acts as a shield and a gain control.